SYNTHESIS AND CHARACTERIZATION OF NANOCRYSTALLINE GaN BY NITRIDATION OF Ga-EDTA COMPLEX

Gallium Nitride (GaN) has potential application in optoelectronic and electronic devices, which are capable of operating at high temperature, high power and in harsh environments (Nakamura et al 1997, Morkoc et al 1994). In addition, GaN powders themselves could be used as high quality phosphors. GaN has low electron affinity value of 2.7-3.3 eV compared to carbon nanotubes (CNTs), zinc oxide (ZnO) and Si, hence GaN has potential for field emission devices (Cuntang et al 2009, Yamanaka et al 2002, Nishida et al 2003). Reports on the field emission characteristics of GaN nanowires have already revealed a high emission current density and a long emitter lifetime (Choi et al 1999).